1 - 5 ? 2000 ixys all rights reserved ixgk 50n60bd1 ixgx 50n60bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 500 v v ge(th) i c = 500 a, v ce = v ge 2.5 5.5 v i ces v ce = v ces t j = 25 c 650 a v ge = 0 v t j = 125 c5ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.3 v hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque, to-247 ad 1.13/10 nm/lb.in. weight to-264 10 g to-268 5 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? international standard packages jedec to-268 and plus247 (hole- less to-247) high frequency igbt and antparallel fred in one package new generation hdmos tm process high current handling capability mos gate turn-on fordrive simplicity fast recovery epitaxial diode (fred) with soft recovery and low i rm applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages space savings (two devices on one package easy to mount with 1 screw g c e to-264 aa (ixgk) 98516b (7/00) plus247 (ixgx) v ces = 600 v i c25 = 75a v ce(sat) = 2.3 v t fi = 85ns (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 5 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 25 35 s pulse test, t 300 s, duty cycle 2 % c ies 4000 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 340 pf c res 100 pf q g 110 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 30 nc q gc 35 nc t d(on) 50 ns t ri 50 ns t d(off) 200 ns t fi 85 150 ns 150 ns e off 1.5 mj t d(on) 50 ns t ri 60 ns e on 3mj t d(off) 200 ns t fi 175 ns e off 2.5 mj r thjc 0.42 k/w r thck to-264 package 0.15 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 2.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, 2.5 v pulse test, t 300 ms, duty cycle d 22 % i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ms 2 2.5 a v r = 100 v 175 ns t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 50 ns r thjc 0.65 k/w ixgk 50n60bd1 ixgx 50n60bd1 plus247 tm (ixgx) dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 5 ? 2000 ixys all rights reserved v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 v ge - volts 0246810 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 9v 5v v ce = 10v t j = 25 c t j = 25 c i c = 25a i c = 50a i c = 100a t j = 125 c f = 1mhz 7v v ge = 15v t j = 25 c v ce - volts 012345 i c - amperes 0 20 40 60 80 100 t j = 125 c c iss c oss 7v 5v v ge = 15v 13v 11v 9v 9v v ge = 15v 13v 11v v ge = 15v 13v 7v 11v c rss 5v ixgk 50n60bd1 ixgx 50n60bd1 figure 1. saturation voltage characteristics figure 2. extended output characteristics figure 3. saturation voltage characteristics figure 4. temperature dependence of v ce(sat) figure 5. admittance curves figure 6. capacitance curves
4 - 5 ? 2000 ixys all rights reserved figure 9. gate charge figure 10. turn-off safe operating area figure 11. igbt transient thermal resistance figure 8. dependence of e on and e off on r g . figure 7. dependence of e on and e off on i c . r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.02 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 20406080100120 v ge - volts 0 4 8 12 16 i c - amperes 0 20406080100 e (off) - millijoules 0 2 4 6 8 10 12 e (on) - millijoules 0 1 2 3 4 5 6 v ce = 250v i c =25a e (on) e (off) e (on) e (off) t j = 125c r g = 6.2 dv/dt < 5v/ns d=0.1 d=0.05 single pulse d = duty cycle t j = 125c 600 e (off) d=0.2 d=0.5 d=0.01 r g = 4.7 i c =25a t j = 125c i c = 100a i c = 50a e (on) e (on) e (off) ixgk 50n60bd1 ixgx 50n60bd1
5 - 5 ? 2000 ixys all rights reserved 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0 1 2 3 4 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v nc a/ m s a/ m s t rr ns t fr a/ m s s dsep 60-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100 c v r = 300v t vj = 100 c i f = 60a fig.14. peak reverse current i rm versus -di f /dt fig. 13. reverse recovery charge q r versus -di f /dt fig. 12. forward current i f versus v f t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 15. dynamic parameters q r , i rm versus t vj fig. 16. recovery time t rr versus -di f /dt fig. 17. peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 18. transient thermal resistance junction to case t vj = 25 c t vj =150 c t vj =100 c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.324 0.0052 2 0.125 0.0003 3 0.201 0.0385 ixgk 50n60bd1 ixgx 50n60bd1
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